Gallium nitride materials and devices III (21-24 January 2008, San Jose, California, USA)Morkoç, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2008, issn 0277-786X, isbn 978-0-8194-7069-0, 1Vol, various pagings, isbn 978-0-8194-7069-0Conference Proceedings

Gallium nitride materials and devices IV (26-29 January 2009, San Jose, California, United States)Morkoç, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, various pagings, isbn 978-0-8194-7462-9 0-8194-7462-2Conference Proceedings

Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channelsMATULIONIS, Arvydas; MORKOC, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 721608.1-721608.14Conference Paper

Piezoelectric Quantum 1/f Noise in AlGaN HFETs and ReliabilityHANDEL, Peter H; MORKOC, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72160R.1-72160R.12Conference Paper

Wurtzitic semiconductors heterostructures grown on (hk.ℓ) oriented substrates: the interplay between spontaneous and piezoelectric polarization fields, elastic energy and the modification of Quantum Confined Stark EffectGIL, Bernard.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72160E.1-72160E.11Conference Paper

Use of Quantum 1/f Noise Formulas in the Reliability Characterization of Nitride-Based HeterostructuresHANDEL, Peter H; MORKOC, Hadis; TRUONG, Amanda M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941K.1-68941K.13, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayerSHIMADA, Ryoko; JINQIAO XIE; MORKOC, Hadis et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64731H.1-64731H.8, issn 0277-786X, isbn 978-0-8194-6586-3, 1VolConference Paper

Piezoelectric Quantum 1/f Noise in Nitride-Based HeterostructuresHANDEL, Peter H; MORKOC, Hadis; SIA, Engkee et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941N.1-68941N.14, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Emission of biased green quantum wells in time and wavelength domainSCHWARZ, Ulrich T.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72161U.1-72161U.13Conference Paper

The role of anisotropy for the defect properties in a-plane GaNKROGER, R; PASKOVA, T.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689403.1-689403.5, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

III-Nitride Based Deep Ultraviolet Light SourcesSHUR, M. S; GASKA, R.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689419.1-689419.8, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Nitride-based p-i-n photodetectors with Ni catalyst processingCHEN, Chin-Hsiang.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72162H.1-72162H.6Conference Paper

Gallium nitride materials and devices II (22-25 January 2007, San Jose, California, USA)Morkoç, Hadis; Litton, Cole W.Proceedings of SPIE, the International Society for Optical Engineering. 2007, issn 0277-786X, isbn 978-0-8194-6586-3, 1Vol, various pagings, isbn 978-0-8194-6586-3Conference Proceedings

Microwave ferrites, part 1: fundamental propertiesÖZGÜR, Ümit; ALIVOV, Yahya; MORKOC, Hadis et al.Journal of materials science. Materials in electronics. 2009, Vol 20, Num 9, pp 789-834, issn 0957-4522, 46 p.Article

High-κ dielectrics and advanced channel concepts for Si MOSFETMO WU; ALIVOV, Y. I; MORKOC, Hadis et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 10, pp 915-951, issn 0957-4522, 37 p.Article

Two-Dimensional Drift-Diffusion Simulation on GaN HFETsQIAN FAN; MORKOC, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 79391O.1-79391O.8Conference Paper

Microwave ferrites, part 2: passive components and electrical tuningÖZGÜR, Ümit; ALIVOV, Yahya; MORKOC, Hadis et al.Journal of materials science. Materials in electronics. 2009, Vol 20, Num 10, pp 911-952, issn 0957-4522, 42 p.Article

Coupling of spontaneous emission from GaN-AlN quantum dots into silver surface plasmonsNEOGI, Arup; MORKOC, Hadis; KURODA, Takamasa et al.Optics letters. 2005, Vol 30, Num 1, pp 93-95, issn 0146-9592, 3 p.Article

Current Spreading and Its Related Issues in GaN-based Light Emitting DiodesSHIM, Jong-In; YUN, Joosun; KIM, Hyunsung et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72160V.1-72160V.9Conference Paper

Structural Defects and Degradation of High Power Pure-Blue GaN-based Laser DiodesTOMIYA, Shigetaka; GOTO, Osamu; IKEDA, Masao et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68940N.1-68940N.6, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Surface control of GaN alloys for photonic and electronic devicesHASHIZUME, Tamotsu; SHIOZAKI, Nanako; OHI, Kota et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72160U.1-72160U.8Conference Paper

1/f Noise in Nitride-Based Spintronic DevicesHANDEL, Peter H; TRUONG, Amanda M.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68914G.1-68914G.7, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Comparative study of electroluminescence efficiency of blue (In,Ga)N and red GaAs quantum well diodesINADA, T; JIMI, H; FUJIWARA, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941T.1-68941T.10, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

New possibility of MOVPE-Growth in GaN and InN : Polarization in GaN and Nitrogen-Incorporation in InNMATSUOKA, Takashi.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 647302.1-647302.12, issn 0277-786X, isbn 978-0-8194-6586-3, 1VolConference Paper

Defect studies in HVPE GaN by positron annihilation spectroscopyTUOMISTO, Filip.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 647312.1-647312.14, issn 0277-786X, isbn 978-0-8194-6586-3, 1VolConference Paper